OXYGEN-ADSORPTION ON GE(111) SURFACE .1. ATOMIC CLEAN SURFACE

被引:34
作者
SURNEV, L
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D O I
10.1016/0039-6028(81)90650-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:439 / 457
页数:19
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共 36 条
[1]   SURFACE STATES AND SURFACE BONDS OF SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109
[2]   THERMAL DESORPTION OF METALS FROM TUNGSTEN SINGLE-CRYSTAL SURFACES [J].
BAUER, E ;
BONCZEK, F ;
POPPA, H ;
TODD, G .
SURFACE SCIENCE, 1975, 53 (DEC) :87-109
[3]   DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J].
BERTUCCI, M ;
LELAY, G ;
MANNEVILLE, M ;
KERN, R .
SURFACE SCIENCE, 1979, 85 (02) :471-492
[4]  
BOONSTRA AH, 1968, PHILIPS RES REPT S, V3
[5]   ELLIPSOMETRY IN SUB-MONOLAYER REGION [J].
BOOTSMA, GA ;
MEYER, F .
SURFACE SCIENCE, 1969, 14 (01) :52-&
[6]   THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J].
CHEN, M ;
BATRA, IP ;
BRUNDLE, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1216-1220
[7]   OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].
CHIAROTTI, G ;
NANNARONE, S ;
PASTORE, R ;
CHIARADIA, P .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+
[8]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[9]   TEMPERATURE-DEPENDENCE OF OXIDATION RATE IN CLEAN GE (111) [J].
FRANTSUZOV, AA ;
MAKRUSHIN, NI .
SURFACE SCIENCE, 1973, 40 (02) :320-342
[10]   PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS [J].
GARNER, CM ;
LINDAU, I ;
MILLER, JN ;
PIANETTA, P ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :372-375