REGULAR ARTIFICIAL NANOMETER-SCALE STRUCTURES FABRICATED WITH SCANNING TUNNELING MICROSCOPE

被引:20
作者
GU, QJ
LIU, N
ZHAO, WB
MA, ZL
XUE, ZQ
PANG, SJ
机构
[1] Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences, Beijing 100080
关键词
D O I
10.1063/1.113354
中图分类号
O59 [应用物理学];
学科分类号
摘要
The scanning tunneling microscope (STM) has been used to fabricate grooves a few nm wide at room temperature by extracting atoms one by one from the Si(111)7×7 surfaces. When the direction of modification is parallel to the basic vector of Si(111)7×7 surfaces, grooves formed by such a process have atomically straight edges and lateral features as small as one 7×7 unit cell wide. The critical current under various voltages for fabricating grooves is measured. The modification mechanism is discussed based on the experiment data in this letter.© 1995 American Institute of Physics.
引用
收藏
页码:1747 / 1749
页数:3
相关论文
共 16 条
[1]   NANOMETER-SCALE HOLE FORMATION ON GRAPHITE USING A SCANNING TUNNELING MICROSCOPE [J].
ALBRECHT, TR ;
DOVEK, MM ;
KIRK, MD ;
LANG, CA ;
QUATE, CF ;
SMITH, DPE .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1727-1729
[2]   ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
NATURE, 1987, 325 (6103) :419-421
[3]  
BEHM RJ, SCANNING TUNNELING M, P113
[4]   CONFINEMENT OF ELECTRONS TO QUANTUM CORRALS ON A METAL-SURFACE [J].
CROMMIE, MF ;
LUTZ, CP ;
EIGLER, DM .
SCIENCE, 1993, 262 (5131) :218-220
[5]   POSITIONING SINGLE ATOMS WITH A SCANNING TUNNELING MICROSCOPE [J].
EIGLER, DM ;
SCHWEIZER, EK .
NATURE, 1990, 344 (6266) :524-526
[6]   FORMATION OF NANOMETER-SCALE GROOVES IN SILICON WITH A SCANNING TUNNELING MICROSCOPE [J].
KOBAYASHI, A ;
GREY, F ;
WILLIAMS, RS ;
AONO, M .
SCIENCE, 1993, 259 (5102) :1724-1726
[7]   FIELD-INDUCED TRANSFER OF AN ATOM BETWEEN 2 CLOSELY SPACED ELECTRODES [J].
LANG, ND .
PHYSICAL REVIEW B, 1992, 45 (23) :13599-13606
[8]   FIELD-INDUCED NANOMETER-SCALE TO ATOMIC-SCALE MANIPULATION OF SILICON SURFACES WITH THE STM [J].
LYO, IW ;
AVOURIS, P .
SCIENCE, 1991, 253 (5016) :173-176
[9]   FIELD EVAPORATION OF SILICON IN THE FIELD-ION MICROSCOPE AND SCANNING TUNNELING MICROSCOPE CONFIGURATIONS [J].
MISKOVSKY, NM ;
WEI, CM ;
TSONG, TT .
PHYSICAL REVIEW LETTERS, 1992, 69 (16) :2427-2430
[10]   FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(001) SURFACES [J].
SALLING, CT ;
LAGALLY, MG .
SCIENCE, 1994, 265 (5171) :502-506