FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(001) SURFACES

被引：73

作者：

SALLING, CT ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN, DEPT MAT SCI & ENGN, MADISON, WI 53706 USA

来源：

SCIENCE | 1994年 / 265卷 / 5171期

关键词：

D O I：

10.1126/science.265.5171.502

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The scanning tunneling microscope has been used to define regular crystalline structures at room temperature by removing atoms from the silicon (001) surface. A single atomic layer can be removed to define features one atom deep and create trenches with ordered floors. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Conditions under which such removal is possible are defined, and a mechanism is proposed.

引用

页码：502 / 506

页数：5

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