INTERFACE PROPERTIES OF (NH4)(2)S-X-TREATED IN0.5GA0.5P SCHOTTKY CONTACTS

被引：13

作者：

KWON, SD ^{[1
]}

KIM, CH ^{[1
]}

KWON, HK ^{[1
]}

CHOE, BD ^{[1
]}

LIM, H ^{[1
]}

机构：

[1] AJOU UNIV,DEPT ELECTR ENGN,SUWON 441749,SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.358801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of (NH4)2Sx solution treatment on the interface properties of metal-In0.5Ga0.5P Schottky contacts have been investigated by capacitance-voltage measurements and deep-level transient spectroscopy measurements. The (NH4) 2Sx-treated samples show Schottky barrier heights that are more sensitive to the metal work functions. It is also found that (NH 4)2Sx treatment of In0.5Ga 0.5P can passivate the phosphorus-vacancy-related interface deep traps of Schottky contacts as well as suppress the generation of interface deep traps due to heat treatment. © 1995 American Institute of Physics.

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页码：2202 / 2204

页数：3

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