RECRYSTALLIZATION OF BURIED AMORPHOUS LAYERS AND ASSOCIATED ELECTRICAL EFFECTS IN P+-IMPLANTED SI

[1] WEAK-BEAM OBSERVATION OF DISLOCATION LOOPS IN SILICON [J]. JOURNAL OF MICROSCOPY-OXFORD, 1973, 98 (JUL): : 165 - 169

[2] CHADDERTON LT, 1971, RAD EFFECTS, V7, P127

[3] CHADDERTON LT, 1965, RAD DAMAGE CRYSTALS, P82

[4] AN EXPERIMENTAL DETERMINATION OF THE ELECTRICAL RESISTIVITY OF STACKING FAULTS AND LATTICE VACANCIES IN GOLD [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (71): : 1351 - &

[5] Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

[6] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[7] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[8] CSEPREGI L, 1976, APPL PHYS LETT, V29, P646

[9] Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[10] RAPID PROFILE MEASUREMENTS IN ION IMPLANTED SILICON [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (01): : 23 - &

[1] WEAK-BEAM OBSERVATION OF DISLOCATION LOOPS IN SILICON [J]. JOURNAL OF MICROSCOPY-OXFORD, 1973, 98 (JUL): : 165 - 169

[2] CHADDERTON LT, 1971, RAD EFFECTS, V7, P127

[3] CHADDERTON LT, 1965, RAD DAMAGE CRYSTALS, P82

[4] AN EXPERIMENTAL DETERMINATION OF THE ELECTRICAL RESISTIVITY OF STACKING FAULTS AND LATTICE VACANCIES IN GOLD [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (71): : 1351 - &

[5] Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

[6] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[7] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[8] CSEPREGI L, 1976, APPL PHYS LETT, V29, P646

[9] Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[10] RAPID PROFILE MEASUREMENTS IN ION IMPLANTED SILICON [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (01): : 23 - &