USE OF PSEUDOMORPHIC GAINAS IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

ENQUIST, PM ^{[1
]}

RAMBERG, LP ^{[1
]}

NAJJAR, FE ^{[1
]}

SCHAFF, WJ ^{[1
]}

KAVANAGH, KL ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

The authors would like to acknowledge the expert assistance of J. Berry. This work was supported in part by IBM and Brush-Weliman;

D O I：

10.1016/0022-0248(87)90420-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：378 / 382

页数：5

共 9 条

[1]

ANKRI D, 1983, I PHYS C SER, V65, P431

[2]

ENQUIST PM, 1986, IN PRESS JUN DEV RES

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[4] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04) :L241-L243

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J].

MALIK, RJ ;

CAPASSO, F ;

STALL, RA ;

KIEHL, RA ;

RYAN, RW ;

WUNDER, R ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :600-602

[7] (GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE [J].

MILLER, DL ;

ASBECK, PM ;

ANDERSON, RJ ;

EISEN, FH .

ELECTRONICS LETTERS, 1983, 19 (10) :367-368

[8] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

ROSENBERG, JJ ;

BENLAMRI, M ;

KIRCHNER, PD ;

WOODALL, JM ;

PETTIT, GD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

[9]

ZIPPERIAN TE, 1986, I PHYS C P, V79, P421

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