GROWTH OF EFG SILICON RIBBONS

[1] SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 127 - &

[2] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[3] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (08) : 681 - &

[4] CHALMERS B, 1975, NSFRANNSEGI37967XFR7

[5] COCKS FH, 1976, J ELECTROCHEM SOC, V121, P596

[6] DYRE LD, 1971, J ELECTROCHEM SOC, V118, P957

[7] ORIENTATION DEPENDENCE OF DEFECT STRUCTURE IN EFG SILICON RIBBONS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 511 - 513

[8] GARONE LC, UNPUBLISHED RESEARCH

[9] JEWETT DN, UNPUBLISHED RESEARCH

[10] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (07) : 571 - &

[1] SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 127 - &

[2] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[3] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (08) : 681 - &

[4] CHALMERS B, 1975, NSFRANNSEGI37967XFR7

[5] COCKS FH, 1976, J ELECTROCHEM SOC, V121, P596

[6] DYRE LD, 1971, J ELECTROCHEM SOC, V118, P957

[7] ORIENTATION DEPENDENCE OF DEFECT STRUCTURE IN EFG SILICON RIBBONS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 511 - 513

[8] GARONE LC, UNPUBLISHED RESEARCH

[9] JEWETT DN, UNPUBLISHED RESEARCH

[10] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (07) : 571 - &