CHARACTERIZATION OF DEEP LEVEL DEFECTS IN THERMALLY ANNEALED FE-DOPED SEMIINSULATING INP BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY

Photoinduced current transient spectroscopy has been used to show the effect of thermal annealing on deep level defects in semi-insulating Fe doped InP wafers. The annealing experiments have been accomplished in an infrared image furnace during 15 min at temperatures ranging from 663 to 820-degrees-C. We show that this treatment leads to the formation of four deep traps named T1-T4 having the following activation energies: 0.14, 0.21, 0.41, and 0.53 eV, respectively. We show that the thermal anneal at high temperature leads to deterioration of the electrical properties of the material.