CHARACTERIZATION OF FUSED GLASS PASSIVATION WITH SELECTED DIODE STRUCTURES

被引:12
作者
FLOWERS, DL
HUGHES, HG
机构
关键词
D O I
10.1149/1.2123740
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:154 / 160
页数:7
相关论文
共 15 条
[1]  
BALK P, 1965, EL SOC SPRING M SAN, P237
[2]  
BERMAN AH, 1976, SOLID STATE TECHNOL, V19, P29
[3]  
FLOWERS DL, 1978, EL SOC EXT ABSTR, P644
[4]   USEFUL MODIFICATION OF TECHNIQUE FOR MEASURING CAPACITANCE AS A FUNCTION OF VOLTAGE [J].
GOODMAN, AM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) :753-757
[5]   EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].
GROVE, AS ;
LEISTIKO, O ;
HOOPER, WW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+
[6]  
GROVE AS, 1967, PHYS TECHNOL S, P33
[7]   EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].
JORGENSEN .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&
[8]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756
[9]   EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].
KERR, DR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :385-&
[10]  
NEW TC, UNPUB