NEW METHOD TO IMPROVE THERMAL-STABILITY IN THE INTERFACE OF SILICON AND TUNGSTEN BY THE INTERPOSITION OF PLASMA-DEPOSITED TUNGSTEN NITRIDE THIN-FILM

被引：29

作者：

LEE, CW ^{[1
]}

KIM, YT ^{[1
]}

LEE, JY ^{[1
]}

机构：

[1] KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally stable tungsten nitride/tungsten bilayer has been proposed for the application of metallization. This bilayer is sequentially formed by plasma enhanced chemical vapor deposition without breaking vacuum. The Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy reveal that the interaction between the W and Si substrate can be prevented by interposing a 800-Angstrom-thick W67N33 layer. The W67N33/W bilayer maintains the integrity of the interface during annealing at 850 degrees C for 30 min without the formation of Si2W and interdiffusion phenomena. Sheet resistivity of the W67N33/W bilayer is gradually decreased from 17 to 12 mu Omega cm at annealing temperatures up to 850 degrees C.

引用

页码：619 / 621

页数：3

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