FACTORS AFFECTING THE ENCROACHMENT OF TUNGSTEN INTO THE SI/SIO2 INTERFACE DURING THE REDUCTION OF TUNGSTEN HEXAFLUORIDE BY SILICON

被引：8

作者：

FEINERMAN, AD

机构：

[1] Microfabrication Applications Laboratory, Department of Electrical Enaineering and Computer Science, University of Illinois, Chicago

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 11期

关键词：

D O I：

10.1149/1.2086287

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of various plasma and wet chemical surface treatments on the encroachment of tungsten into the Si/SiO2 interface during the selective reduction of WF6 by silicon is discussed. A CF4/O2 plasma maximizes tungsten encroachment, and a shorter immersion in dilute HF in HNO3 minimizes encroachment. Two structures are used to evaluate the encroachment. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：3683 / 3687

页数：5

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