STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS

被引：17

作者：

NTSOENZOK, E ^{[1
]}

BARBOT, JF ^{[1
]}

DESGARDIN, P ^{[1
]}

VERNOIS, J ^{[1
]}

BLANCHARD, C ^{[1
]}

ISABELLE, DB ^{[1
]}

机构：

[1] LAB MET PHYS,URA 131,F-86022 POITIERS,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10(14)p(+)cm(-2). The greatest drawback induced by proton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both annealed and unannealed samples.

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页码：1932 / 1936

页数：5

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