PROTON-IRRADIATED SILICON - COMPLETE ELECTRICAL CHARACTERIZATION OF THE INDUCED DOMINANT DEEP DEFECTS AFTER LONG-TERM ANNEALING

被引：4

作者：

HUPPI, MW

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90081-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：87 / 90

页数：4

共 10 条

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