SELECTIVE-AREA EPITAXY OF GAINAS USING CONVENTIONAL AND NOVEL GROUP-III PRECURSORS

Selective area growth of GaInAs has been performed by low pressure metalorganic vapor phase epitaxy (MOVPE) on SiO2-masked InP substrates. The growth rate and composition variations induced by the mask pattern have been evaluated by cathodoluminescence for two In precursors, trimethylindium (TMI) and dimethylaminopropyl-dimethyl-indium (DADI) in combination with triethylgallium (TEG) and AsH3, and compared to model calculations taking gas phase diffusion into account. The resulting characteristic parameter D/k could be attributed to the chemical stability of the precursors. We found that the use of DADI results in a less pronounced growth rate and In incorporation enhancement at the mask edges than the use of TMI, but DADI still has to be labeled ''chemically less stable'' than TEG under MOVPE conditions. Gas phase reactions with the hydrides probably have to be taken into account to understand these findings.