EXPERIMENTAL-STUDY OF THE RESPONSE-TIME OF GAAS AS A PHOTOEMITTER

被引：21

作者：

ALEKSANDROV, AV

AVILOV, MS

CALABRESE, R

CIULLO, G

DIKANSKY, NS

GUIDI, V

LAMANNA, G

LENISA, P

LOGACHOV, PV

NOVOKHATSKY, AV

TECCHIO, L

YANG, B

机构：

[1] UNIV FERRARA,DIPARTMENTO FIS,I-44100 FERRARA,ITALY

[2] IST NAZL FIS NUCL,I-44100 FERRARA,ITALY

[3] LAB NAZL LEGNARO,I-35020 LEGNANO,ITALY

[4] UNIV BARI,DIPARTIMENTO FIS,I-70125 BARI,ITALY

[5] IST NAZL FIS NUCL,I-70125 BARI,ITALY

[6] UNIV TURIN,DIPARTIMENTO FIS SPERIMENTALE,I-10125 TURIN,ITALY

[7] IST NAZL FIS NUCL,I-10125 TURIN,ITALY

[8] PROEL TECNOL,FLORENCE,ITALY

来源：

PHYSICAL REVIEW E | 1995年 / 51卷 / 02期

关键词：

D O I：

10.1103/PhysRevE.51.1449

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps. © 1995 The American Physical Society.

引用

页码：1449 / 1452

页数：4

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