ELECTRON-EMISSION PROPERTIES OF LASER PULSED GAAS NEGATIVE ELECTRON-AFFINITY PHOTOCATHODES

被引:9
作者
SANFORD, CA [1 ]
MACDONALD, NC [1 ]
机构
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期
关键词
D O I
10.1116/1.585172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The emitted electron energy distribution of a laser pulsed GaAs negative electron affinity (NEA) photocathode was measured with a retarding grid analyzer. The total electron energy distribution was found to depend strongly on laser intensity and cathode thickness. A model based on the separation of the excess photogenerated carriers within the cathode structure has been developed and tested to explain this behavior. Pulsed electron emission patterns were obtained by directing the emitted electrons to a phosphorous screen. The patterns indicate that uniform emission occurs and that the emission develops uniformly as the cathode is activated to a NEA condition. An extrapolated plot of the angular intensity FWHM versus V(B)1/2 indicates that the pulsed cathode possesses a natural semicone angle of approximately 10-degrees. The angular distribution is narrow because of the electron refraction which occurs upon emission due to differences in the effective mass and vacuum rest mass of the electrons.
引用
收藏
页码:1853 / 1857
页数:5
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