ANALYSIS AND MODELING OF PARASITIC SUBSTRATE COUPLING IN CMOS CIRCUITS

被引:18
作者
ARAGONES, X [1 ]
MOLL, F [1 ]
ROCA, M [1 ]
RUBIO, A [1 ]
机构
[1] UNIV ILLES BALEARS,FAC SCI,DEPT PHYS,E-07071 PALMA DE MALLORCA,SPAIN
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1995年 / 142卷 / 05期
关键词
CMOS TECHNOLOGY; PARASITIC CAPACITANCES; SUBSTRATE NOISE ANALYSIS; MIXED-SIGNAL CIRCUITS; RAM ERRORS; VLSI;
D O I
10.1049/ip-cds:19952164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Analysis of the substrate coupling in integrated circuits is done taking into account technology and layout parameters for different types and location of transistors using a device-level simulator. The noise coupling tendencies of IC scaling are analysed, following interest in advanced technologies. The potential for permanent errors is shown in the case of a RAM cell. A circuit-level model for the coupling mechanism is proposed. The implementation of an IC for experimentation, and the measurements obtained, are discussed.
引用
收藏
页码:307 / 312
页数:6
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