REPLY TO COMMENTS ON PAPER TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON

被引：10

作者：

RALEIGH, DO

机构：

[1] Science Center, North American Rockwell Corporation, Thousand Oaks, California

来源：

关键词：

D O I：

10.1149/1.2410988

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：111 / +

页数：1

共 7 条

[1] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JORGENSEN, PJ .

[3] EFFECT OF AN ELECTRIC FIELD ON THE OXIDATION OF ZINC [J].

JORGENSEN, PJ .

[4] PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA [J].

NORTON, FJ .

[5]

NORTON FJ, 1962, 8TH T NAT VAC S, P8

[6] TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON [J].

RALEIGH, DO .

[7]

WAGNER C, 1966, CONSIDERATIONS EFFEC