TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON

被引：41

作者：

RALEIGH, DO

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 08期

关键词：

D O I：

10.1149/1.2424119

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：782 / +

页数：1

共 42 条

[1]

CISMARU D, 1961, 1ST INT C MET CORR, P237

[2] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J].

CLAUSSEN, BH ;

FLOWER, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) :983-987

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[4] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :527-533

[5] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].

DEAL, BE ;

SKLAR, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+

[6]

DEAL BE, 1965, T METALL SOC AIME, V233, P524

[7] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J].

EVANS, JW ;

CHATTERJI, SK .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) :1064-1067

[8]

FLINT PS, 1962, MAY LOS ANG M SOC

[9]

HAUL R, 1962, Z ELEKTROCHEM, V66, P636

[10] DETERMINATION OF THE ELECTRONIC CONDUCTIVITY IN SILVER HALIDES BY MEANS OF POLARIZATION MEASUREMENTS [J].

ILSCHNER, B .

JOURNAL OF CHEMICAL PHYSICS, 1958, 28 (06) :1109-1112

← 1 2 3 4 5 →