COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES

被引：33

作者：

KYSER, DF ^{[1
]}

PYLE, R ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1980年 / 24卷 / 04期

关键词：

Compendex;

D O I：

10.1147/rd.244.0426

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

LITHOGRAPHY

引用

页码：426 / 437

页数：12

共 19 条

[1]

BROERS AN, 1978, RC7403 IBM TJ WATS R

[2]

BROERS AN, MICROCIRCUIT ENGINEE

[3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[4]

CHANG THP, 1976, 7TH P INT C EL ION B, P392

[5] MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS [J].

DILL, FH ;

NEUREUTHER, AR ;

TUTTLE, JA ;

WALKER, EJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :456-464

[6] DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST [J].

GREENEICH, JS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :970-976

[7] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY [J].

GROBMAN, WD ;

LUHN, HE ;

DONOHUE, TP ;

SPETH, AJ ;

WILSON, A ;

HATZAKIS, M ;

CHANG, THP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :360-368

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY [J].

GROBMAN, WD ;

LUHN, HE ;

DONOHUE, TP ;

SPETH, AJ ;

WILSON, A ;

HATZAKIS, M ;

CHANG, THP .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :282-290

[9] RECENT DEVELOPMENTS IN ELECTRON-RESIST EVALUATION TECHNIQUES [J].

HATZAKIS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1276-1279

[10] MONTE-CARLO SIMULATION OF SPATIALLY DISTRIBUTED BEAMS IN ELECTRON-BEAM LITHOGRAPHY [J].

KYSER, DF ;

VISWANATHAN, NS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1305-1308

← 1 2 →