LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING

被引：37

作者：

HERMAN, IP

DONNELLY, VM

GUINN, KV

CHENG, CC

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.72.2801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a new technique for detecting adsorbates in real time during plasma processing. During etching of Si(100) in a Cl2 plasma, pulsed XeCl excimer laser irradiation of the surface induces thermal desorption of SiCl(x) (x = 0-4). Desorbing products are detected by either laser-induced fluorescence (for SiCl) excited by the same laser pulse, or by plasma-induced emission (for SiCl and Si) from electron impact excitation. The technique has a time resolution of < 0.1 s and submonolayer sensitivity, and should be applicable to processes at high ambient pressure.

引用

页码：2801 / 2804

页数：4

共 24 条

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