LASER ETCHING OF SILICON BY CHLORINE - EFFECT OF POST-DESORPTION COLLISIONS AND CHLORINE IN-DIFFUSION ON THE LASER DESORPTION YIELD

被引：17

作者：

ALIOUCHOUCHE, A ^{[1
]}

BOULMER, J ^{[1
]}

BOURGUIGNON, B ^{[1
]}

BUDIN, JP ^{[1
]}

DEBARRE, D ^{[1
]}

DESMUR, A ^{[1
]}

机构：

[1] UNIV PARIS 11, INST PHYSICOCHIM MOLEC ORSAY, PHOTOPHYS MOLEC LAB, CNRS, F-91405 ORSAY, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90481-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The yield of SiCl laser induced desorption in laser chemical etching of silicon by chlorine is found to never exceed 80%, even under conditions where the desorption rate is saturated. We show that this incomplete desorption is not a consequence of SiCl redeposition due to post-desorption collisions. Instead it is accounted for by in-diffusion and segregation of chlorine during the superficial melting of silicon induced by the pulsed laser.

引用

页码：52 / 58

页数：7

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