INSITU SUBSTRATE SURFACE CLEANING BY LOW-ENERGY ION-BOMBARDMENT FOR HIGH-QUALITY THIN-FILM FORMATION

被引：22

作者：

AOKI, Y

AOYAMA, S

UETAKE, H

MORIZUKA, K

OHMI, T

机构：

[1] Department of Electronics, Tohoku University

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 02期

关键词：

D O I：

10.1116/1.578730

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The in situ cleaning of a substrate surface by low-energy ion bombardment is discussed concentrating on the effect on the quality of sputter-deposited metal thin films. The removal of carbon from the wafer surface with the addition of H-2 to Ar plasma atmosphere during the in situ cleaning was confirmed by secondary ion mass spectrometry evaluation. High crystallinity Ti films were obtained by deposition using Ar/H-2 in situ cleaning by low-energy ion bombardment. By the introduction of the Ar/H-2 plasma in situ substrate surface cleaning, Ti film growth by sputtering was confirmed to improve its crystallinity and its surface smoothness.

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页码：307 / 313

页数：7

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