ERROR ANALYSIS OF HIGH-FREQUENCY MOS CAPACITANCE CALCULATIONS

被引：11

作者：

BREWS, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 05期

关键词：

D O I：

10.1016/0038-1101(74)90074-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：447 / 456

页数：10

相关论文

共 9 条

[1] BREWS JR, TO BE PUBLISHED
[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[3] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
SAH, CT
SNOW, EH
DEAL, BE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &
[4] GROVE AS, 1967, PHYSICS TECHNOLOG 91
[5] SEMICONDUCTOR SURFACE VARACTOR
LINDNER, R
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +
[6] MCNUTT MJ, PREPRINT
[7] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS
SAH, CT
PIERRET, RF
TOLE, AB
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (09) : 681 - +
[8] SAH CT, 1964, 1 U ILL EL ENG RES L, P83
[9] EXACT FREQUENCY-DEPENDENT COMPLEX ADMITTANCE OF MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW-TEMPERATURE DOPANT IMPURITY RESPONSE
TEMPLE, V
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 93 - 113