OBSERVATION OF TURN-ON ACTION IN A GATE-TRIGGERED THYRISTOR USING A NEW MICROWAVE TECHNIQUE

被引：4

作者：

TERASAWA, Y ^{[1
]}

机构：

[1] HATACHI LTD,HITACHI RES LAB,IBARAKI,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1973.17733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：714 / 721

页数：8

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[4]

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[6]

GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[7]

GERLACH W, 1966, TELEFUNKENZEITUNG, V3, P301

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LEDERHANDLER, SR ;

GIACOLETTO, LJ .

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[10]

LONGINI RL, 1963, IEEE DEVICE, VED10, P178