COMPARISON OF BORON PROFILES BY THE SPREADING RESISTANCE PROFILE AND THE SECONDARY ION MASS-SPECTROMETRY TECHNIQUES

被引：6

作者：

CLAPPER, RA

SCHIMMEL, DG

TSAI, JCC

JABARA, FS

STEVIE, FA

KAHORA, PM

机构：

[1] AT&T MICROELECTR,READING,PA 19604

[2] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 06期

关键词：

D O I：

10.1149/1.2086823

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper compares boron profiles measured by spreading resistance and SIMS techniques. The boron samples were prepared under conditions similar to an implanted-diffused base of an n-p-n transistor. Good agreements between the two methods were obtained. Effects of sample preparation on spreading resistance measurements are discussed also. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1877 / 1882

页数：6

共 12 条

[1] AN EFFICIENT INTEGRATION TECHNIQUE FOR USE IN THE MULTILAYER ANALYSIS OF SPREADING RESISTANCE PROFILES [J].