EVIDENCE FOR COMPETING GROWTH PHASES IN ION-BEAM-DEPOSITED EPITAXIAL SILICON FILMS

被引:8
作者
ORRMANROSSITER, KG [1 ]
MITCHELL, DRG [1 ]
DONNELLY, SE [1 ]
ROSSOUW, CJ [1 ]
GLANVILL, SR [1 ]
MILLER, PR [1 ]
ALBAYATI, AH [1 ]
VANDENBERG, JA [1 ]
ARMOUR, DG [1 ]
机构
[1] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1080/09500839008206498
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the fundamental processes involved in thin-film growth. In these experiments layers of silicon were deposited onto (001) silicon substrates using 30 eV and 50 eV28Si+ions. This Letter reports on the use of ultramicrotomy and high-resolution transmission electron microscopy to obtain lattice images of ion- beam-deposited epitaxial silicon films. The lattice images show that film growth proceeds via a competition between epitaxial and amorphous phases, similar to island (Volmer-Weber) growth. Electron energy loss and ion scattering measurements show that, although the film is epitaxial, it contains defect structures. The lattice images indicate that a sufficient amount of the native oxide layer could be removed simply using low-energy28Si+bombardment to enable epitaxial growth. In the case of samples etched in situ by low-energy chlorine ions, initial epitaxial growth gave way to an amorphous growth phase after ͌7-5nm. © 1990 Taylor & Francis Group, LLC.
引用
收藏
页码:311 / 318
页数:8
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