EFFECT OF NITROGEN IMPLANTATION ON THE SURFACE HARDNESS OF PURE ALUMINUM AND ALLOY MATERIALS

被引:16
作者
JERVIS, TR
LU, HL
TESMER, JR
机构
[1] LOS ALAMOS NATL LAB,DIV MEDIUM ENERGY PHYS,LOS ALAMOS,NM 87545
[2] LOS ALAMOS NATL LAB,DIV PHYS,LOS ALAMOS,NM 87545
基金
美国能源部;
关键词
D O I
10.1016/0168-583X(92)95282-V
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Samples of high purity annealed aluminum and 6061-T6 aluminum alloy were implanted with N+ ions at 200 keV at doses of 5, 10, 18, and 28 x 10(17) CM-2. Additionally a third sample was implanted with 15 x 10(17) CM-2 at 200 keV followed by an implant of 11 X 10(17) CM-2 at 100 keV. Implant profiles were analyzed using Rutherford backscattering (RBS). The surface hardness of these samples were measured using a nanoindenter. A substantial increase in surface hardness was observed in all the implanted samples. The thickness and peak hardness of the surface layer were enhanced by dual energy implantation. Beam heating during ion implantation resulted in annealing of the 6061-T6 samples. These effects were confirmed by annealing experiments which produced little change in overall hardness profiles. Large scale cracking of the hard surface layer was observed in low dose pure Al samples. This cracking behavior was altered by annealing,
引用
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页码:59 / 63
页数:5
相关论文
共 16 条
[1]  
[Anonymous], 1985, METALS HDB
[2]   FORMATION OF CHEMICAL COMPOUNDS BY ION-BOMBARDMENT OF THIN TRANSITION-METAL FILMS [J].
BELII, IM ;
KOMAROV, FF ;
TISHKOV, VS ;
YANKOVSKII, VM .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :343-352
[3]   A method for interpreting the data from depth-sensing indentation instruments [J].
Doerner, M. F. ;
Nix, W. D. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) :601-609
[5]   ALL-ALUMINUM-ALLOY ULTRAHIGH-VACUUM SYSTEM FOR A LARGE-SCALE ELECTRON POSITRON COLLIDER [J].
ISHIMARU, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :1170-1175
[6]  
Ishimaru H., 1990, MRS BULL, V15, P23
[7]   CHARACTERIZATION OF ALUMINUM NITRIDE LAYERS FORMED DIRECTLY BY 700-800 KEV N2+(N-15) IMPLANTATION INTO ALUMINUM [J].
KIDO, Y ;
KAKENO, M ;
YAMADA, K ;
HIOKI, T ;
KAWAMOTO, J ;
TADA, M .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (10) :2067-2077
[8]   FORMATION OF ALUMINUM NITRIDE BY NITROGEN-ION IMPLANTATION IN ALUMINUM SINGLE-CRYSTAL [J].
KIMURA, K ;
ONITSUKA, Y ;
NAKANISHI, K ;
MANNAMI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08) :1145-1145
[9]   FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM [J].
LIESKE, N ;
HEZEL, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5806-5810
[10]  
MCCUNE RC, 1987, MATER RES SOC S P, V100, P157