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SATURATION POWER IN GAAS AMPLIFIERS
被引:7
作者
:
HAYES, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Electrical Engineering University of Colorado, Boulder, Colo
HAYES, RE
机构
:
[1]
Dept. of Electrical Engineering University of Colorado, Boulder, Colo
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1968年
/ ED15卷
/ 03期
关键词
:
D O I
:
10.1109/T-ED.1968.16159
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
The results of an experimental investigation of the saturation power level of GaAs amplifiers are reported. It is found that there is an optimum range of applied voltages and electron density-length products to achieve the maximum saturation power. The largest saturation efficiency observed was 4 percent. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:183 / +
页数:1
相关论文
共 10 条
[1]
LINEAR OR SMALL-SIGNAL THEORY FOR GUNN EFFECT
[J].
ENGELMANN, RW
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0
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0
h-index:
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ENGELMANN, RW
;
QUATE, CF
论文数:
0
引用数:
0
h-index:
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QUATE, CF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:44
-+
[2]
GUNN JB, 1964, P S PLASMA EFFECTS S
[3]
AMPLIFICATION IN 2-VALLEY SEMICONDUCTORS
[J].
HAKKI, BW
论文数:
0
引用数:
0
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0
HAKKI, BW
.
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
:808
-&
[4]
KENNEDY WK, 1966, THESIS CORNELL U
[5]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
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0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[6]
BULK GAAS NEGATIVE CONDUCTANCE AMPLIFIERS
[J].
MCWHORTER, AL
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MCWHORTER, AL
;
FOYT, AG
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FOYT, AG
.
APPLIED PHYSICS LETTERS,
1966,
9
(08)
:300
-+
[7]
CONTACTING N-TYPE HIGH RESISTIVITY GAAS FOR GUNN OSCILLATORS
[J].
RAMACHANDRAN, TB
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0
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RAMACHANDRAN, TB
;
SANTOSUOSSO, RP
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0
引用数:
0
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SANTOSUOSSO, RP
.
SOLID-STATE ELECTRONICS,
1966,
9
(07)
:733
-+
[8]
MICROWAVE AMPLIFICATION IN A GAAS BULK SEMICONDUCTOR
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
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THIM, HW
;
BARBER, MR
论文数:
0
引用数:
0
h-index:
0
BARBER, MR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:110
-+
[9]
MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTOR (N-TYPE GAAS RESISTIVITY EFFECT E-T)
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
;
BARBER, MR
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BARBER, MR
;
HAKKI, BW
论文数:
0
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HAKKI, BW
;
KNIGHT, S
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0
h-index:
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KNIGHT, S
;
UENOHARA, M
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0
引用数:
0
h-index:
0
UENOHARA, M
.
APPLIED PHYSICS LETTERS,
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(06)
:167
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[10]
TEMPERATURE EFFECTS IN BULK GAAS AMPLIFIERS
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(02)
:59
-+
←
1
→
共 10 条
[1]
LINEAR OR SMALL-SIGNAL THEORY FOR GUNN EFFECT
[J].
ENGELMANN, RW
论文数:
0
引用数:
0
h-index:
0
ENGELMANN, RW
;
QUATE, CF
论文数:
0
引用数:
0
h-index:
0
QUATE, CF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:44
-+
[2]
GUNN JB, 1964, P S PLASMA EFFECTS S
[3]
AMPLIFICATION IN 2-VALLEY SEMICONDUCTORS
[J].
HAKKI, BW
论文数:
0
引用数:
0
h-index:
0
HAKKI, BW
.
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
:808
-&
[4]
KENNEDY WK, 1966, THESIS CORNELL U
[5]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[6]
BULK GAAS NEGATIVE CONDUCTANCE AMPLIFIERS
[J].
MCWHORTER, AL
论文数:
0
引用数:
0
h-index:
0
MCWHORTER, AL
;
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
FOYT, AG
.
APPLIED PHYSICS LETTERS,
1966,
9
(08)
:300
-+
[7]
CONTACTING N-TYPE HIGH RESISTIVITY GAAS FOR GUNN OSCILLATORS
[J].
RAMACHANDRAN, TB
论文数:
0
引用数:
0
h-index:
0
RAMACHANDRAN, TB
;
SANTOSUOSSO, RP
论文数:
0
引用数:
0
h-index:
0
SANTOSUOSSO, RP
.
SOLID-STATE ELECTRONICS,
1966,
9
(07)
:733
-+
[8]
MICROWAVE AMPLIFICATION IN A GAAS BULK SEMICONDUCTOR
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
;
BARBER, MR
论文数:
0
引用数:
0
h-index:
0
BARBER, MR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:110
-+
[9]
MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTOR (N-TYPE GAAS RESISTIVITY EFFECT E-T)
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
;
BARBER, MR
论文数:
0
引用数:
0
h-index:
0
BARBER, MR
;
HAKKI, BW
论文数:
0
引用数:
0
h-index:
0
HAKKI, BW
;
KNIGHT, S
论文数:
0
引用数:
0
h-index:
0
KNIGHT, S
;
UENOHARA, M
论文数:
0
引用数:
0
h-index:
0
UENOHARA, M
.
APPLIED PHYSICS LETTERS,
1965,
7
(06)
:167
-&
[10]
TEMPERATURE EFFECTS IN BULK GAAS AMPLIFIERS
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(02)
:59
-+
←
1
→