SATURATION POWER IN GAAS AMPLIFIERS

被引:7
作者
HAYES, RE
机构
[1] Dept. of Electrical Engineering University of Colorado, Boulder, Colo
关键词
D O I
10.1109/T-ED.1968.16159
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The results of an experimental investigation of the saturation power level of GaAs amplifiers are reported. It is found that there is an optimum range of applied voltages and electron density-length products to achieve the maximum saturation power. The largest saturation efficiency observed was 4 percent. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:183 / +
页数:1
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