BULK GAAS NEGATIVE CONDUCTANCE AMPLIFIERS

被引：58

作者：

MCWHORTER, AL

FOYT, AG

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 08期

关键词：

D O I：

10.1063/1.1754759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：300 / +

页数：1

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共 25 条

[1] THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT
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[2] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT
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[5] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
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VASSELL, MO
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[6] CONWELL EM, TO BE PUBLISHED
[7] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES
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[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +
[8] ELECTROSTATIC DOMAINS IN 2-VALLEY SEMICONDUCTORS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 189 - +
[9] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS
COPELAND, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3602 - +
[10] COPELAND JA, TO BE PUBLISHED