DISLOCATION-FREE LEC GROWTH OF INP DOPED WITH GE AND S

被引：3

作者：

COCKAYNE, B

BAILEY, T

MACEWAN, WR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90400-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：507 / 510

页数：4

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