GAAS PLANAR GUNN DIODES FOR DC-BIASED OPERATION

被引：21

作者：

TAKEUCHI, M

SEKIDO, K

HIGASHISAKA, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 01期

关键词：

D O I：

10.1109/T-ED.1972.17383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：125 / +

页数：1

共 10 条

[1] LOGIC AND MEMORY ELEMENTS USING 2-VALLEY SEMICONDUCTORS [J].

COPELAND, JA ;

HAYASHI, T ;

UENOHARA, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :584-&

[2] SOLID-STATE BULK PHENOMENA AND THEIR APPLICATION TO INTEGRATED ELECTRONICS [J].

ENGELBRE.RS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) :210-&

[3] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].

LAX, M .

PHYSICAL REVIEW, 1960, 119 (05) :1502-1523

[4] SYNTHESIS OF COMPLEX ELECTRONIC FUNCTIONS BY SOLID STATE BULK EFFECTS [J].

SANDBANK, CP .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :369-+

[5] CW OSCILLATIONS IN GAAS PLANAR-TYPE BULK DIODES [J].

SEKIDO, K ;

TAKEUCHI, T ;

HASEGAWA, F ;

KIKUCHI, S .

PROCEEDINGS OF THE IEEE, 1969, 57 (05) :815-+

[6]

SEKIDO K, 1970, J JAP SOC APPL PHY S, V39, P19

[7] IMPROVEMENT OF RELIABILITY OF GUNN DIODES [J].

SHOJI, M ;

DALESSIO, FJ .

PROCEEDINGS OF THE IEEE, 1969, 57 (02) :250-+

[8] FUNCTIONAL BULK SEMICONDUCTOR OSCILLATORS [J].

SHOJI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :535-+

[9]

THIM HW, 1966, ELECTRON LETT, V2, P403

[10]

TOKUMARU Y, 1971, J PHYS SOC APPL PH S, V40, P107

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