SOME ASPECTS OF THE EFFECT OF HEAT-TREATMENT ON THE MINORITY-CARRIER DIFFUSION LENGTH IN LOW RESISTIVITY P-TYPE SILICON

被引：7

作者：

HO, CT

WALD, FV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 01期

关键词：

D O I：

10.1002/pssa.2210680114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：103 / 107

页数：5

共 20 条

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[9] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J].

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[10]

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