ION-BEAM SYNTHESIS OF ALPHA AND BETA FESI2 LAYERS

被引：30

作者：

HUNT, TD

SEALY, BJ

REESON, KJ

GWILLIAM, RM

HOMEWOOD, KP

WILSON, RJ

MEEKISON, CD

BOOKER, GR

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

[2] NAT HIST MUSEUM,DEPT MINERAL,LONDON SW7 5BD,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95014-V

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Buried layers of both the semiconducting beta phase and the metallic a phase of iron disilicide have been produced by ion beam synthesis in silicon. The structure and properties of the layers before and after annealing was followed by Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), photoluminescence (PL) and sheet resistance measurements. A PL peak at 1.54 mum (0.81 eV) with a full width half maximum (FWHM) value of 3 meV was obtained after a 900-degrees-C anneal for 18 h. Optical absorption measurements indicated a room temperature bandgap of 0.87-0.89 eV. Annealing at 1000-degrees-C for 1 h produced the metallic alpha phase with a resistivity of 270 muOMEGA cm.

引用

页码：60 / 64

页数：5

共 16 条

[1] SEMICONDUCTING SILICIDES AS POTENTIAL MATERIALS FOR ELECTROOPTIC VERY LARGE-SCALE INTEGRATED-CIRCUIT INTERCONNECTS [J].