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A COMPACT HBT DEVICE MODEL-BASED ON A ONE-FLUX TREATMENT OF CARRIER TRANSPORT

被引：28
作者：
TANAKA, S
LUNDSTROM, MS
机构：
[1] 1285 Electrical Engineering, Purdue University, West Lafayette
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 03期
关键词：
D O I：
10.1016/0038-1101(94)90004-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's Aux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.
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收藏
页码：401 / 410
页数：10
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