NUMERICAL STUDY OF EMITTER-BASE JUNCTION DESIGN FOR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：53

作者：

DAS, A ^{[1
]}

LUNDSTROM, MS ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,NMOS IC PROC DEV & MFG,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：863 / 870

页数：8

共 19 条

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[3] IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 612 - 614
[4] DATTA S, 1987, TREE8735 PURD U SCH
[5] COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR
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RAMBERG, LP
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2663 - 2669
[6] AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1758 - 1765
[7] GENERATION-RECOMBINATION CURRENT IN THE EMITTER-BASE JUNCTION OF ALGAAS/GAAS HBTS
ITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (09): : 1400 - 1404
[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
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[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[9] MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS
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YOSHIDA, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 467 - 473
[10] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES
LEVI, AFJ
YAFET, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44

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