STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

CHENG, TM

CHIN, A

CHANG, CY

HUANG, MF

HSIEH, KY

HUANG, JH

机构：

[1] NATL SUN YAT SEN UNIV,DEPT MAT ENGN,KAOHSIUNG,TAIWAN

[2] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature InGaAs strained quantum wells have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. For an optimized annealing condition, arsenic precipitates can be successfully confined in the InGaAs wells and completely depleted in the GaAs barriers. The strong accumulation of As precipitates shows that the phenomena are not due to the strain effect but may be explained by the difference of interfacial energy between precipitate and matrix. The ability to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.

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页码：1546 / 1548

页数：3

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