GROWTH AND PROPERTIES OF ALGAAS/GAAS HETEROSTRUCTURES ON GAAS (110) SURFACE

被引：21

作者：

ZHOU, JM

HUANG, Y

LI, YK

JIA, WY

机构：

[1] Chinese Acad of Sciences, Beijing, China, Chinese Acad of Sciences, Beijing, China

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

Semiconducting aluminum compounds - SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1016/0022-0248(87)90394-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on MBE growth of high quality modulation doped heterostructures on GaAs (110) without intentional misorientation. PL measurements have shown that a high quality (110) 2DEG system was obtained. Quantum Hall effect measurements and mobility enhancement results show that the AlGaAs/GaAs(110) interface displays the same two-dimensional electron gas characteristics as the AlGaAs/GaAs (100) interface.

引用

页码：221 / 223

页数：3

共 9 条

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