TOTAL PRESSURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION DURING THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON

被引：13

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 02期

关键词：

D O I：

10.1002/crat.2170170209

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / 187

页数：7

共 11 条

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KUHNE, H ;

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[6] DEPENDENCE OF DOPING ELEMENT INCORPORATION ON TEMPERATURE IN THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON .3. EMPIRICAL INCORPORATION CHARACTERISTIC OF THE SI-P-H SYSTEM [J].

KUHNE, H .

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[7] LOW-PRESSURE SILICON EPITAXY [J].

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[10] KINETICS OF LATERAL AUTO-DOPING IN SILICON EPITAXY [J].

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