ANALYSIS OF THE EFFECT OF THERMAL NITRIDATION OF SILICON DIOXIDE ON SILICON INTERSTITIAL CONCENTRATION

被引：10

作者：

DUNHAM, ST

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1195 / 1201

页数：7

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