PHOTOENHANCED DEPOSITION OF SILICON-OXIDE THIN-FILMS USING A NOVEL WINDOWLESS INTERNAL NITROGEN DISCHARGE LAMP

被引：6

作者：

BAKER, SD

MILNE, WI

ROBERTSON, PA

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 04期

关键词：

D O I：

10.1007/BF01210343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：243 / 248

页数：6

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