BOROSILICATE GLASS-FILMS FOR INP ENCAPSULATION

被引：3

作者：

SINGH, S

BONNER, WA

CAMLIBEL, I

GRODKIEWICZ, WH

KYLE, TR

PASTEUR, G

VANUITERT, LG

WILLIAMS, RS

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 05期

关键词：

D O I：

10.1063/1.92373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：349 / 352

页数：4

共 12 条

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GROVES, SH .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :229-231

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :574-&

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DONNELLY, JP ;

ARMIENTO, CA ;

DIADIUK, V ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :74-76

[4] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J].

DONNELLY, JP ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :418-420

[5]

GOODING EG, 1934, J SOC GLASS TECHNOL, V18, P321

[6] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[7] HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG ;

BALLMAN, AA ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :511-513

[8]

NISHIOLA K, 1979, APPL PHYS LETT, V35, P511

[9] STABILITY OF GLAZED SILICON SURFACES TO WATER ATTACK [J].

PLISKIN, WA .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1468-&

[10]

TIEN PK, 1979, APPL PHYS LETT, V34, P701, DOI 10.1063/1.90611

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