CONSTRUCTIVE 3-DIMENSIONAL LITHOGRAPHY WITH ELECTRON-BEAM-INDUCED DEPOSITION FOR QUANTUM EFFECT DEVICES

被引:58
作者
KOOPS, HWP [1 ]
KRETZ, J [1 ]
RUDOLPH, M [1 ]
WEBER, M [1 ]
机构
[1] TH DARMSTADT,INST ANGEW PHYS,D-64289 DARMSTADT,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词
D O I
10.1116/1.586991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two- and three-dimensional patterns and structures can be grown by electron-beam induced deposition from organic and metalorganic precursors. Using a very fine electron beam in a dedicated field emission scanning electron microscope produces nanometer size deposits which extend from surfaces to heights in the micrometer range. The material is fed to the sample through a nozzle which presents a small leakage flux to the specimen chamber. Having an image processor attached to the microscope allows two- and three-dimensional deposition of material to be controlled. Selecting special speed rates for the motion of the beam generates inclined deposits even at a 90-degrees beam landing angle. Combining a tilted sample and the two-dimensional way of structuring yield three-dimensional structures. These nanostructures have very special characteristics with respect to resistivity and shape. Selecting dimethyl-gold-trifluoro-acetylacetonate as precursor, a current of 1 nA, and a low electron energy of 10 keV for the deposition process, resistors of 700 OMEGA are obtained with a specific resistivity of 10(-2) OMEGA cm.
引用
收藏
页码:2386 / 2389
页数:4
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