ELECTRON-BEAM INDUCED TUNGSTEN DEPOSITION - GROWTH-RATE ENHANCEMENT AND APPLICATIONS IN MICROELECTRONICS

Electron-beam induced deposition (EBID) of tungsten from the precursor gas W(CO)6 was investigated with the aim of enhancing the growth rate of the process. By varying dwell and loop time over a limited range, experimental deposition rates were compared to a time dependent model developed to describe the focused ion beam induced deposition. We found the cross section sigma for EBID at 30 keV beam energy to be 1.2+/-0.2X10(-16) cm-2. Based on these data, we predicted the achievable growth rate as a function of the current density. Moreover, EBID was used for x-ray and open stencil mask repair, the generation of etch masks and the deposition of electrically conductive lines. The resistivity of the latter was found to be affected by the beam energy and current; the best value achieved was 10(-2) OMEGA cm.