ELECTRON-BEAM-INDUCED RESIST AND ALUMINUM FORMATION

被引：15

作者：

ISHIBASHI, A ^{[1
]}

FUNATO, K ^{[1
]}

MORI, Y ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.585281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown electron-beam-induced resist and aluminum from alkyl naphthalene and trimethyl aluminum, respectively. The growth mechanism of the electron-beam-induced materials has been suggested to be bridge-formation by the physically adsorbed molecules of the sources. We believe that the bridge-formation is driven by direct interaction with electrons, not by diffusive processes such as local heating and catalytic reactions. The observed growth rate is consistent with the one calculated from the heat of physical adsorption. The method is of potential interest for stereo-resist and also for selective atomic layer epitaxy.

引用

页码：169 / 172

页数：4

共 14 条

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