A 4-MBIT DRAM WITH FOLDED-BIT-LINE ADAPTIVE SIDEWALL-ISOLATED CAPACITOR (FASIC) CELL

被引：6

作者：

MASHIKO, K

NAGATOMO, M

ARIMOTO, K

MATSUDA, Y

FURUTANI, K

MATSUKAWA, T

YAMADA, M

YOSHIHARA, T

NAKANO, T

机构：

[1] Mitsubishi Electric Corp, Jpn, Mitsubishi Electric Corp, Jpn

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 05期

关键词：

D O I：

10.1109/JSSC.1987.1052794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DATA STORAGE, DIGITAL

引用

页码：643 / 650

页数：8

共 21 条

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