SIDEGATING IN A GAAS MBE-GROWN HFET STRUCTURE

被引：2

作者：

VUONG, THH

GIBSON, WC

AHRENS, RE

PARSEY, JM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期

关键词：

D O I：

10.1109/16.43800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the sidegating effect in an MBE-grown HFET GaAs structure. The sidegating is considerable and persists to large distances. On the other hand, the leakage current is very low. We propose a model which takes into account the unusual features of sidegating in this structure and is consistent with other studies of similar structures. Based on the model, a change in the isolation process was implemented. This resulted in a large reduction of the sidegating effect and confirmed the main features of the model. © 1990 IEEE

引用

页码：51 / 57

页数：7

共 12 条

[1]

DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051

[2] BACKGATING CHARACTERISTICS OF MODFET STRUCTURES [J].