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EFFECTS OF DIFFUSION-INDUCED DISLOCATIONS ON EXCESS LOW-FREQUENCY NOISE
被引:28
作者
:
NISHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SANYO ELECT CO LTD,SEMICOND DIV,INTEGRATED CIRCUITS DEPT,GUMMA,JAPAN
TOKYO SANYO ELECT CO LTD,SEMICOND DIV,INTEGRATED CIRCUITS DEPT,GUMMA,JAPAN
NISHIDA, M
[
1
]
机构
:
[1]
TOKYO SANYO ELECT CO LTD,SEMICOND DIV,INTEGRATED CIRCUITS DEPT,GUMMA,JAPAN
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1973年
/ ED20卷
/ 03期
关键词
:
D O I
:
10.1109/T-ED.1973.17632
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:221 / 226
页数:6
相关论文
共 15 条
[1]
RELATIVE INFLUENCE OF MAJORITY AND MINORITY CARRIERS ON EXCESS NOISE IN SEMICONDUCTOR FILAMENTS
BESS, L
论文数:
0
引用数:
0
h-index:
0
BESS, L
[J].
JOURNAL OF APPLIED PHYSICS,
1955,
26
(11)
: 1377
-
1381
[2]
BESS L, 1966, J APPL PHYS, V37, P3457
[3]
BESS L, 1956, PHYS REV, V105, P72
[4]
FAIRFIELD JM, 1968, J ELECTROCHEM TECHN, V6, P110
[5]
SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 783
-
+
[6]
ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
PHYSICAL REVIEW,
1952,
87
(02):
: 387
-
387
[7]
CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
MCDONALD, RA
论文数:
0
引用数:
0
h-index:
0
MCDONALD, RA
EHLENBERGER, GG
论文数:
0
引用数:
0
h-index:
0
EHLENBERGER, GG
HUFFMAN, TR
论文数:
0
引用数:
0
h-index:
0
HUFFMAN, TR
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 807
-
+
[8]
DISTRIBUTION OF SURFACE STATE DENSITY RELATED TO DIFFUSION-INDUCED DISLOCATIONS NEAR JUNCTION FORMED BY DIFFUSION OF PHOSPHORUS IN SILICON
NISHIDA, M
论文数:
0
引用数:
0
h-index:
0
NISHIDA, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(05)
: 673
-
&
[9]
REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN SILICON JUNCTION DIODES
PELL, EM
论文数:
0
引用数:
0
h-index:
0
PELL, EM
ROE, GM
论文数:
0
引用数:
0
h-index:
0
ROE, GM
[J].
JOURNAL OF APPLIED PHYSICS,
1956,
27
(07)
: 768
-
772
[10]
INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(04)
: 305
-
+
←
1
2
→
共 15 条
[1]
RELATIVE INFLUENCE OF MAJORITY AND MINORITY CARRIERS ON EXCESS NOISE IN SEMICONDUCTOR FILAMENTS
BESS, L
论文数:
0
引用数:
0
h-index:
0
BESS, L
[J].
JOURNAL OF APPLIED PHYSICS,
1955,
26
(11)
: 1377
-
1381
[2]
BESS L, 1966, J APPL PHYS, V37, P3457
[3]
BESS L, 1956, PHYS REV, V105, P72
[4]
FAIRFIELD JM, 1968, J ELECTROCHEM TECHN, V6, P110
[5]
SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 783
-
+
[6]
ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
PHYSICAL REVIEW,
1952,
87
(02):
: 387
-
387
[7]
CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
MCDONALD, RA
论文数:
0
引用数:
0
h-index:
0
MCDONALD, RA
EHLENBERGER, GG
论文数:
0
引用数:
0
h-index:
0
EHLENBERGER, GG
HUFFMAN, TR
论文数:
0
引用数:
0
h-index:
0
HUFFMAN, TR
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 807
-
+
[8]
DISTRIBUTION OF SURFACE STATE DENSITY RELATED TO DIFFUSION-INDUCED DISLOCATIONS NEAR JUNCTION FORMED BY DIFFUSION OF PHOSPHORUS IN SILICON
NISHIDA, M
论文数:
0
引用数:
0
h-index:
0
NISHIDA, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(05)
: 673
-
&
[9]
REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN SILICON JUNCTION DIODES
PELL, EM
论文数:
0
引用数:
0
h-index:
0
PELL, EM
ROE, GM
论文数:
0
引用数:
0
h-index:
0
ROE, GM
[J].
JOURNAL OF APPLIED PHYSICS,
1956,
27
(07)
: 768
-
772
[10]
INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(04)
: 305
-
+
←
1
2
→