MINORITY-HOLE DIFFUSION LENGTH IN HEAVILY DOPED SILICON

被引：9

作者：

WANG, CH

MISIAKOS, K

NEUGROSCHEL, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2233 / 2234

页数：2

相关论文

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