MEASUREMENT OF HOLE MOBILITY IN HEAVILY DOPED N-TYPE SILICON

被引：70

作者：

SWIRHUN, SE

DELALAMO, JA

SWANSON, RM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期

关键词：

D O I：

10.1109/EDL.1986.26333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：168 / 173

页数：6

共 14 条

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[9] MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICON [J].

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[10] MEASUREMENT OF MINORITY-CARRIER LIFETIME AND DIFFUSION LENGTH IN SILICON EPITAXIAL LAYERS BY MEANS OF PHOTOCURRENT TECHNIQUE [J].

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